Fabrication of In0.52Al0.48As/In0.53Ga0.47As p-HEMT utilizing Ne-based atomic layer etching

The characteristics of 0.15 mum In
_0.52
Al
_0.48
As/In
_0.53
Ga
_0.47
As pseudomorphic high electron mobility transistors (p-HEMTs) fabricated using the Ne-based atomic layer etching (ALET) technology and the Ar-based conventional reactive ion etching (RIE) technology are reported. Compared to the p-HEMTs fabricated using the Ar-based RIE, the p-HEMTs fabricated using the ALET exhibited improved device performance including trasconductance (G
_M
= 1.38 S/mm), I
_ON
/I
_OFF
ratio (1.18 times 10
⁴
), and cutoff frequency (f
_T
= 233 GHz), mainly due to the extremely low plasma-induced damage of the ALET to the Schottky gate area.