First results of a new crystal growth technology of III-V-compounds and Ge is presented. To damp the convection instabilities in the melt and to control the interface shape travelling magnetic fields and temperature are simultaneously generated within a heater-magnet module.
Published in:
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Date of Conference: 25-29 May 2008