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Browse Conference Publications > Indium Phosphide and Related ... Help

InAs quantum dot structures on InP grown by MOVPE for mid-infrared emission

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4 Author(s)
Tang Xiaohong ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Yin Zongyou ; Teng Jinghua ; Du Anyan

High density, uniform InAs quantum dots (QDs) have been grown on InxGa1-xAs/InP matrix by metal-organic vapor phase epitaxy (MOVPE) using a two-step growth method. By sandwiching the InAs QDs between InxGa1-xAs barrier layers, emission wavelength of the InAs/InxGa1-xAs/InP QD structures reaches >2.3 mum.

Published in:
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Date of Conference: 25-29 May 2008

Page(s):
1 - 3
ISSN :
1092-8669
E-ISBN :
978-1-4244-2259-3
Print ISBN:
978-1-4244-2258-6
INSPEC Accession Number:
10412020
Conference Location :
Versailles
Digital Object Identifier :
10.1109/ICIPRM.2008.4702893
Product Type:
Conference Publications

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