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Thermal analysis of PT IGBT by using ANSYS

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4 Author(s)
Sehwan Ryu ; Dept. of Electr. Eng., Konkuk Univ., Seoul ; Deukyoung Han ; Hyungkeun Ahn ; El Nokali, M.

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, the thermal model and thermal distribution of discrete insulated gate bipolar transistor with non heat-sink and heat-sink has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, ANSYS and compared with experimental data.

Published in:

Power Electronics, 2007. ICPE '07. 7th Internatonal Conference on

Date of Conference:

22-26 Oct. 2007