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A Novel High Voltage, Vertical MOSFET for High Power RF Applications

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12 Author(s)
Golio, M. ; HWi Semicond., Inc., Phoenix, AZ ; Davies, R. ; Gogoi, B. ; Lutz, D.
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This paper describes a novel, high-voltage vertical FET (HWFET) for high power RF applications. The silicon MOSFET provides improved power density, RF gain, and ruggedness over competing device technologies. A unique flip-chip packaging strategy also provides thermal and reliability advantages. Both a 25 Watt and a 100 Watt embodiment of the structure exhibit over 20 dB of gain with >45% efficiency from 1.2 to 1.4 GHz in a package that is approximately 1/4 the size of competing device technologies. A 300 Watt version of the device exhibits >15.5 dB of gain with > 46% efficiency from 1.03 to 1.09 GHz.

Published in:

Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE

Date of Conference:

12-15 Oct. 2008