Referenced Items are not available for this document.
This paper describes a novel, high-voltage vertical FET (HWFET) for high power RF applications. The silicon MOSFET provides improved power density, RF gain, and ruggedness over competing device technologies. A unique flip-chip packaging strategy also provides thermal and reliability advantages. Both a 25 Watt and a 100 Watt embodiment of the structure exhibit over 20 dB of gain with >45% efficiency from 1.2 to 1.4 GHz in a package that is approximately 1/4 the size of competing device technologies. A 300 Watt version of the device exhibits >15.5 dB of gain with > 46% efficiency from 1.03 to 1.09 GHz.
Published in:
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Date of Conference: 12-15 Oct. 2008
- Page(s):
- 1 - 4
- ISSN :
- 1550-8781
- E-ISBN :
- 978-1-4244-1940-1
- Print ISBN:
- 978-1-4244-1939-5
- INSPEC Accession Number:
- 10323608
- Conference Location :
- Monterey, CA
- Digital Object Identifier :
- 10.1109/CSICS.2008.21
- Product Type:
- Conference Publications
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