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In this paper, we present the development of a compact H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier for use in next generation active and passive high-resolution imaging systems. The low- noise amplifier (LNA) circuit has been realized using an advanced 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology and achieves a small-signal gain of 13.5 dB at 300 GHz and a linear gain of more than 10.5 dB over the bandwidth from 220 to 320 GHz. The use of grounded coplanar waveguide (GCPW) topology in combination with cascode transistors resulted in a very compact die size of only 0.43 times 0.82 mm2.
Published in:
Compound Semiconductor Integrated Circuits Symposium, 2008. CSIC '08. IEEE
Date of Conference: 12-15 Oct. 2008
- Page(s):
- 1 - 4
- ISSN :
- 1550-8781
- E-ISBN :
- 978-1-4244-1940-1
- Print ISBN:
- 978-1-4244-1939-5
- INSPEC Accession Number:
- 10311974
- Conference Location :
- Monterey, CA
- Digital Object Identifier :
- 10.1109/CSICS.2008.12
- Product Type:
- Conference Publications
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