Referenced Items are not available for this document.
In this letter, the photosensitive effect of n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) after DC stress was investigated. It was discovered that the photo-generated carrier behaviors under optical illumination are related to defect types created by different stress conditions of hot-carrier effect and self-heating effect. These two types of defect creation result in the different photosensitivity behaviors of LTPS TFT. A model considering the relation between photosensitivity and defect is proposed to explain the anomalous illumination behaviors after device degradation.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
12
)
Date of Publication: Dec. 2008
- Page(s):
- 1322 - 1324
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10324483
- Digital Object Identifier :
- 10.1109/LED.2008.2006414
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 21 November 2008
- Issue Date :
- Dec. 2008
- Sponsored by :
- IEEE Electron Devices Society
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