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High-Sensitivity Metal–Semiconductor–Metal Hydrogen Sensors With a Mixture of Pd and \hbox {SiO}_{2} Forming Three-Dimensional Dipoles

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7 Author(s)
Shao-Yen Chiu ; Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung ; Hsuan-Wei Huang ; Tze-Hsuan Huang ; Kun-Chieh Liang
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New metal-semiconductor-metal hydrogen sensors are fabricated to take advantages of symmetrically bidirectional detection. Unlike commonly used single catalytic metal layers, a mixture of Pd and SiO2 inserted between Pd and GaN was employed as sensing media. There are three sensing regions (i.e., 2-D dipole, transient, and 3-D dipole regions) observed in static response. Room-temperature sensitivity larger than 107 was obtained in 1080-ppm H2/N2 ambient. The barrier-height variation is as high as 422 mV. To our best knowledge, these are the highest values ever reported. According to transient response, a short response time of 70 s is obtained at room temperature. Thus, a newly developed concept of forming 3-D dipoles is introduced to possibly explain experimental results.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 12 )

Date of Publication:

Dec. 2008

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