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Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions

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4 Author(s)
Jin-Wook Shin ; Dept. of Electron. Mater. Eng., Kwangwoon Univ., Seoul ; Chel-Jong Choi ; Moongyu Jang ; Won-Ju Cho

N-type Schottky barrier thin film transistors (SB-TFTs) with polycrystalline silicon channel and metallic junctions were fabricated by using Er silicidation, and electrical structural properties were compared to conventional TFTs with phosphorous-doped source/drain regions. The performances of SB-TFTs are better than that of the conventional TFTs. A forming gas annealing process leads to a great improvement in the characteristics of both devices. In particular, excellent electrical characteristics were obtained from the forming gas annealed SB-TFTs: the subthreshold swing of 180 mV/dec, the drive current of 1.47 times 10-5 A, and the on/off current ratio of 5 times 106.

Published in:

IEEE Electron Device Letters  (Volume:29 ,  Issue: 12 )