By Topic

New approach for thermal investigation of a III – V power transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
M. Fontaine ; LEMI - Université de Rouen, rue Thomas Becket, 76821 Mont Saint Aignan, France ; E. Joubert ; O. Latry ; P. Dherbecourt
more authors

In this paper is presented a new method for characterisation of temperature of AlGaN-GaN transistor. An ellipsometer is also explained for measure of refractive index and so propagation time constant.

Published in:

Thermal Inveatigation of ICs and Systems, 2008. THERMINIC 2008. 14th International Workshop on

Date of Conference:

24-26 Sept. 2008