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Grid adaption near moving boundaries in two dimensions for IC process simulation

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1 Author(s)
M. E. Law ; Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

During simulation of silicidation and oxidation, some layers are consumed (poly, silicon) and other layers grow (oxide, silicide). During these growth processes, grid must be added behind the advancing interface and removed in front of it. In a full integrated circuit process simulator, this has to be performed simultaneously with the transient solution of the diffusion equations for silicon dopants. This paper describes an approach of local adaption that leaves unchanged most of the grid. Robust algorithms are described for handling adaption in two-dimensional process simulation. Examples for etching, deposition, and oxidation are described

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:14 ,  Issue: 10 )