The Influence of Nonequilibrium Distribution on Room-Temperature Lasing Spectra in Quantum-Dash Lasers

We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.