By Topic

High performance GaAs power diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Voitovich, V. ; Clifton Ltd., Tartu ; Rang, T. ; Rang, G. ; Pikkov, M.

Films deposited with the Liquid Phase Epitaxy (LPE)technology on the monocristallic GaAs substrates for high voltage power p+-p-i-n-n+ GaAs structures has been developed. Proposed technological and hardware solutions of LPE allow the high efficiency of growing process of diode structures with defined ratings and high structural quality of epitaxial layers. The method and technology for fabrication of GaAs dies for nanosecond range with reverse voltage up to 1200V and current up to 100A is introduced The reverse recovery time of 20 nsec was achieved and could be preserved up to +260degC.

Published in:

Electronics Conference, 2008. BEC 2008. 11th International Biennial Baltic

Date of Conference:

6-8 Oct. 2008