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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:16 Issue:10 Help

New method to determine intrinsic and extrinsic base-collector capacitances of HBT's using the Miller effect

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5 Author(s)
Yeong-Seuk Kim ; Dept. of Semicond. Sci., Chung-Buk Nat. Univ., Cheongju, South Korea ; Sung-Ho Park ; Park, Moon-Pyung ; Kie-Moon Song
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A new method to determine intrinsic and extrinsic base-collector capacitances of HBT's using the Miller effect is presented. The measured S-parameters of an HBT are calibrated and transformed into the ABCD-parameters. The fictitious input and output resistances are added to the HBT and total ABCD-parameters are calculated. The added output resistance degrades the frequency response of the overall network due to the Miller effect, which is used to extract intrinsic and extrinsic base-collector capacitances. The advantage of this method is that it does not require any special test structure.<>

Published in:
Electron Device Letters, IEEE  (Volume:16 ,  Issue: 10 )

Date of Publication: Oct. 1995

Page(s):
445 - 447
ISSN :
0741-3106
INSPEC Accession Number:
5076495
Digital Object Identifier :
10.1109/55.464812
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Oct. 1995
Sponsored by :
IEEE Electron Devices Society

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