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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:16 Issue:10 Help

Enhanced off-state leakage currents in n-channel MOSFETs with N2O-grown gate dielectric

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3 Author(s)
Zeng Xu ; Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong ; Lai, P.T. ; Ng, W.T.

This paper reports on the off-state drain (GIDL) and gate current (Ig) characteristics of n-channel MOSFETs using thin thermal oxide (OX), N/sub 2/O-nitrided oxide (N2ON), and N/sub 2/O-grown oxide (N20G) as gate dielectrics. Important phenomena observed in N20G devices are enhanced GIDL and Ig in the low-field region as compared to the OX and N20N devices. They are attributed to heavy-nitridation-induced junction leakage and shallow-electron-trap-assisted tunneling mechanisms, respectively. Therefore, N2ON oxide is superior to N20G oxide in leakage-sensitive applications.<>

Published in:
Electron Device Letters, IEEE  (Volume:16 ,  Issue: 10 )

Date of Publication: Oct. 1995

Page(s):
436 - 438
ISSN :
0741-3106
INSPEC Accession Number:
5076492
Digital Object Identifier :
10.1109/55.464809
Date of Current Version :
06 August 2002
Issue Date :
Oct. 1995
Sponsored by :
IEEE Electron Devices Society

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