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Electrophotographic patterning of thin-film silicon on glass foil

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3 Author(s)
Gleskova, H. ; Dept. of Electr. Eng., Princeton Univ., NJ, USA ; Wagner, S. ; Shen, D.S.

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on /spl sim/50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

Published in:

Electron Device Letters, IEEE  (Volume:16 ,  Issue: 10 )