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Single Event Gate Rupture Testing on 22A Gate Oxide Structures from a 90nm Commercial CMOS Process

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1 Author(s)
Lawrence, R.K. ; BAE Syst., Manassas, VA

Single event gate rupture (SEGR) testing on existing 22A gate oxide structures from a commercial 90 nm electrical characterization drop-in test-site indicate that classical SEGR, as defined as catastrophic gate oxide breakdown, was not detected. Results in this work do show cumulative gate oxide degradation which increases in relation to heavy ion LET exposure.

Published in:

Radiation Effects Data Workshop, 2008 IEEE

Date of Conference:

14-18 July 2008