By Topic

Total Dose and Single Event Effect Characterization of ECL Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Seehra, S.S. ; Specialty Eng. Organ. of Lockheed Martin Commercial Space Syst., Newtown, PA ; Ditzler, A.J. ; Moyer, S.K.

Radiation and SEE susceptibility of ECL devices manufactured by ON-semiconductor was studied. Test data shows that these devices are highly susceptible to single event transients and upsets when bombarded with heavy ions.

Published in:

Radiation Effects Data Workshop, 2008 IEEE

Date of Conference:

14-18 July 2008