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Investigation of the Mechanism of Stuck Bits in High Capacity SDRAMs

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3 Author(s)

The phenomenon of stuck bits in SDRAMs is studied. Previous work demonstrated this effect is linear with fluence, and is due to reduction in retention time of stuck cells. Particular emphasis is placed on variations in cell structure that affect sensitivity. The exact mechanism of a stuck bit is predicted.

Published in:

Radiation Effects Data Workshop, 2008 IEEE

Date of Conference:

14-18 July 2008