Referenced Items are not available for this document.
We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.
Published in:
Radiation Effects Data Workshop, 2008 IEEE
Date of Conference: 14-18 July 2008
- Page(s):
- 38 - 41
- Print ISBN:
- 978-1-4244-2545-7
- INSPEC Accession Number:
- 10251291
- Conference Location :
- Tucson, AZ
- Digital Object Identifier :
- 10.1109/REDW.2008.13
- Product Type:
- Conference Publications
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