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Developments of long-wavelength VCSELs

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1 Author(s)
Kapon, E. ; Lab. of Phys. of Nanostruct., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne

In this paper, significant progress in long-wavelength VCSELs technology has been achieved in recent years, mostly thanks to the use of high gain InP/InAlGaAs QW active regions and the implementation of intra-cavity contacting using tunnel junctions. The recent demonstrations of high single mode output powers (as high as 2.2 mW up to 85deg C), simultaneously with low power consumption, makes these devices an attractive alternative to traditional distributed feedback lasers in applications requiring low cost, highly integrable light sources.

Published in:

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Date of Conference:

14-18 Sept. 2008