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This paper reports on a 40 W high linearity InGaP/ GaAs 28 V HBT. It uses a high breakdown voltage, high ruggedness HBT process developed by WJ. The device employs a dynamic bias circuit to improve ACLR under WCDMA modulation conditions. The P-1 dB of the device reaches 46 dBm (40W), with a gain around 14.5 dB. With WCDMA one carrier modulation (PAR=8.5 dBc), the device achieves an ACLR of -50 dBC and an efficiency of 19.5% at an output power of 37.5 dBm (5.6 W) at 920-960 MHz frequency band. Without the help of a DPD, the performance of this device will make it an excellent choice for base station and repeater applications.
Date of Conference: 15-20 June 2008