Referenced Items are not available for this document.
This paper reports on a 40 W high linearity InGaP/ GaAs 28 V HBT. It uses a high breakdown voltage, high ruggedness HBT process developed by WJ. The device employs a dynamic bias circuit to improve ACLR under WCDMA modulation conditions. The P-1 dB of the device reaches 46 dBm (40W), with a gain around 14.5 dB. With WCDMA one carrier modulation (PAR=8.5 dBc), the device achieves an ACLR of -50 dBC and an efficiency of 19.5% at an output power of 37.5 dBm (5.6 W) at 920-960 MHz frequency band. Without the help of a DPD, the performance of this device will make it an excellent choice for base station and repeater applications.
Published in:
Microwave Symposium Digest, 2008 IEEE MTT-S International
Date of Conference: 15-20 June 2008
- Page(s):
- 647 - 650
- ISSN :
- 0149-645X
- E-ISBN :
- 978-1-4244-1781-0
- Print ISBN:
- 978-1-4244-1780-3
- INSPEC Accession Number:
- 10398992
- Conference Location :
- Atlanta, GA
- Digital Object Identifier :
- 10.1109/MWSYM.2008.4632915
- Product Type:
- Conference Publications
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