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A Quad-Band GSM/EDGE-Compliant SiGe-Bipolar Power Amplifier

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14 Author(s)
Bakalski, W. ; Infineon Technol., Neubiberg ; Sogl, B. ; Zannoth, M. ; Asam, M.
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A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824-915 MHz and 1710-1910 MHz has been realized in a 0.35-mum SiGe-Bipolar technology. The chip integrates two single-ended three-stage power amplifiers and control circuitry for band-select, power loop control and mode dependent quiescent currents. For power control, an on-chip voltage regulation loop is implemented, using an external P-channel MOS-transistor on a laminate module. At 3.3 V a saturated output power of 35.9 dBm is achieved at 830 MHz and 32.3 dBm at 1710 MHz. The respective peak power added efficiency (PAE) is 56% for low-band and 44% for high-band.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:43 ,  Issue: 9 )