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Recently zinc oxide (ZnO) has drawn attention as it exhibits promising properties for making optoelectronic devices, biosensors. In this paper we will present our recent results from research work on the fabrication of light emitting diodes (LEDs) based on n-ZnO nanorods grown on p-Si by a low temperature chemical approach. The ideality factor of the p- Si/n-ZnO junctions was found to be 5.47+0.67. The high value is probably due to the presence of surface state. Structural, electrical and optical characterization from different processed LEDs will be presented and analyzed.