Cart (Loading....) | Create Account
Close category search window
 

Modulation of Coulomb Blockade Behavior of Room Temperature Operational Single Electron Transistors by Tunnel Junction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Karre, P.S.K. ; Dept. of Electr. & Comput. Eng., Michigan Technol. Univ., Houghton, MI ; Kapoor, A. ; Mallick, Govind ; Karna, S.P.
more authors

The effect of tunneling oxide thickness on the Coulomb blockade behavior of a room temperature operating multi dot Single Electron Transistors (SET) was investigated. Our room temperature operational SETs, fabricated from focused ion beam deposited tungsten nano-islands, clearly show the modulation of Coulomb Blockade voltage with the change in the tunnel oxide thickness. The Coulomb blockade voltage of the device was increased from 2.0 V to 5.0 V by the reduction of tunnel junction thickness from 9 nm to 3 nm. In the present experiment, a decrease in the thickness of the tunneling oxide resulted in an increase in the conductance and tunnel current of the device by two orders of magnitude. The total capacitance of the SET device was reduced from 0.7 atto F to 0.5 atto F with the reduction in the thickness of the tunnel junction thickness of the SET. The charging energy of the SET device was increased from 110 meV to 146 meV with the reduction of the tunnel junction thickness from 9 nm to 3 nm, the modulation of the Coulomb blockade voltage was achieved with the variation in the tunnel junction thickness of the SET device.

Published in:

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Date of Conference:

18-21 Aug. 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.