By Topic

Analyzing N-Curve Metrics for Sub-Threshold 65nm CMOS SRAM

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Mamatha Samson ; Center for VLSI & Embedded Syst. Technol., Int. Inst. of Inf. Technol., Hyderabad ; M. B. Srinivas

This paper examines the usefulness of N-curve metrics for a 65 nm SRAM cell operating in sub-threshold region. Various N-curve metrics are evaluated with changing power supply voltage, temperature, cell ratios, pull up ratios and oxide thickness. N-curve metrics are also evaluated considering the effect of intra die and inter die random threshold voltage variations. Results indicate that N-curve method provides better metrics in terms of SINM and WTI to assess the stability of SRAM operating in sub-threshold region and enables complete functional analysis.

Published in:

2008 8th IEEE Conference on Nanotechnology

Date of Conference:

18-21 Aug. 2008