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Heating Effects in Dual-Gate Devices

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3 Author(s)
Goodnick, S.M. ; Arizona State Univ., Tempe, AZ ; Raleva, K. ; Vasileska, D.

Heating effects are investigated in dual-gate devices using an in-house thermal particle-based device simulator. Our simulation results demonstrate that the dual-gate structure is advantageous even though there is slightly higher current degradation due to lattice heating compared to conventional single gate structures, since the magnitude of the on-current is 1.5-1.8 times larger in this structure. Thus, one can trade off a slight increase in current degradation due to lattice heating for more current drive.

Published in:

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Date of Conference:

18-21 Aug. 2008