Skip to Main Content
Heating effects are investigated in dual-gate devices using an in-house thermal particle-based device simulator. Our simulation results demonstrate that the dual-gate structure is advantageous even though there is slightly higher current degradation due to lattice heating compared to conventional single gate structures, since the magnitude of the on-current is 1.5-1.8 times larger in this structure. Thus, one can trade off a slight increase in current degradation due to lattice heating for more current drive.
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Date of Conference: 18-21 Aug. 2008