By Topic

Enhanced Electrical Conductance of ZnO Nanowire FET by Nondestructive Surface Cleaning

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

Electrical characteristics of zinc oxide nanowire (ZNW) FETs are investigated by nondestructive surface cleaning, ultraviolet irradiation treatment at high temperature and vacuum. UV-light-stimulated oxygen desorption from the active channel improves the device performance of ZNW-FETs. Results show that charge transport in single ZNW strongly depends on its surface environmental conditions and can be explained by formation of depletion layer at the surface by various surface states present on it. The nondestructive surface cleaning removes these absorbed surface states from the nanowire and the current values increase upto ~ 7 muA from ~ 0.4 muA at a bias voltage of 3 V. ZNW-FETs fabricated in this study exhibit mobility of ~ 28 cm2/Vmiddots and a high I ON ne I OFF ratio of ~ 106.

Published in:

IEEE Transactions on Nanotechnology  (Volume:7 ,  Issue: 6 )