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Analytical model of nanoscale piezoresistor

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3 Author(s)
Gridchin, V.A. ; Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Novosibirsk ; Gridchin, A.V. ; Bunzina, V.Yu.

The simple phenomenological model of nanoscale piezoresistor is suggested. An analytical description of the influence of shear strains caused by existing the free borders of piezoresistor, on normal strains epsiv1 and epsiv2 is given. It allows to interpret correctly the experimental data. It is shown that under the decreasing the cross-section of p-type nanoscale piezoresistor less than 4000 nm2 the components m11 and m12 are sharply increasing whereas component m44 stays without significant changes.

Published in:

Strategic Technologies, 2008. IFOST 2008. Third International Forum on

Date of Conference:

23-29 June 2008