Analytical model of nanoscale piezoresistor

The simple phenomenological model of nanoscale piezoresistor is suggested. An analytical description of the influence of shear strains caused by existing the free borders of piezoresistor, on normal strains epsiv
₁
and epsiv
₂
is given. It allows to interpret correctly the experimental data. It is shown that under the decreasing the cross-section of p-type nanoscale piezoresistor less than 4000 nm
²
the components m
₁₁
and m
₁₂
are sharply increasing whereas component m
₄₄
stays without significant changes.