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Silicon Field-Emission Devices Fabricated Using the Hydrogen Implantation–Porous Silicon (HI–PS) Micromachining Technique

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5 Author(s)
Dantas, M.O.S. ; Dept. de Eng. de Sist. Eletronicos, Escola Politec. da Univ. de Sao Paulo, Sao Paulo ; Galeazzo, E. ; Peres, H.E.M. ; Kopelvski, M.M.
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This paper presents a relatively simple method to fabricate field-emitter arrays from silicon substrates. These devices are obtained from silicon micromachining by means of the HI-PS technique - a combination of hydrogen ion implantation and porous silicon used as sacrificial layer. Also, a new process sequence is proposed and implemented to fabricate self-aligned integrated field-emission devices based on this technique. Electrical characteristics of the microtips obtained show good agreement with the Fowler-Nordheim theory, which are suitable for the proposed application.

Published in:

Microelectromechanical Systems, Journal of  (Volume:17 ,  Issue: 5 )