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We present the analysis of direct tunneling (DT) gate leakage current in a 25 nm channel length n-channel metal oxide semiconductor field effect transistor MOSFET using an ensemble full band Monte Carlo (FBMC) simulation which incorporates quantum effects using Schrodinger solver. The DT current is simulated and compared with quantum drift diffusion (DD) results using DESSIS. The FBMC simulations yield DT currents one order higher than DD currents. In addition a dual thickness gate oxide structure is simulated using FBMC and DD and found to be effective in reducing the DT current.