By Topic

Impact of source-to-channel carrier injection properties on device performance of sub-100nm metal source/drain Ge-pMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Takeda, H. ; Device Platforms Res. Labs., NEC Corp., Tokyo ; Yamamoto, T. ; Ikezawa, T. ; Kawada, M.
more authors

Sub-100 nm metal source/drain (MSD) Ge-pMOSFETs are successfully fabricated and the device performance is analyzed from the aspect of source-to-channel carrier injection properties. Our full-band based device simulator is able to reproduce the experimental device characteristics, revealing that the low source-to-channel injected carrier density (Ns) of MSD Ge-devices could limit their source-drain current. In deep sub-100 nm region, the quasi-ballistic transport nature tends to reduce the carrier velocity advantage of Ge to Si, while Ge-devices rather exhibit higher drain current than Si-ones with sufficiently high Ns condition. This Ns increase is a key to develop high-performance Ge-pMOSFETs.

Published in:

VLSI Technology, 2008 Symposium on

Date of Conference:

17-19 June 2008