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Sub-100 nm metal source/drain (MSD) Ge-pMOSFETs are successfully fabricated and the device performance is analyzed from the aspect of source-to-channel carrier injection properties. Our full-band based device simulator is able to reproduce the experimental device characteristics, revealing that the low source-to-channel injected carrier density (Ns) of MSD Ge-devices could limit their source-drain current. In deep sub-100 nm region, the quasi-ballistic transport nature tends to reduce the carrier velocity advantage of Ge to Si, while Ge-devices rather exhibit higher drain current than Si-ones with sufficiently high Ns condition. This Ns increase is a key to develop high-performance Ge-pMOSFETs.