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Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drain Ge NMOSFET

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5 Author(s)
Kobayashi, M. ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA ; Kinoshita, A. ; Saraswat, K. ; Wong, H.-S.P.
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We successfully demonstrated Schottky barrier height modulation in metal/Ge Schottky junction by inserting an ultrathin interfacial SiN layer. The SiN layer suppressed strong Fermi level pinning in metal/Ge junction, which resulted in effective control of the Schottky barrier height. We systematically investigated its physics, for the first time, and almost zero Schottky barrier height was successfully obtained for electrons. We applied this technology to metal source/drain Ge NMOSFET and achieved low source/drain resistance.

Published in:

VLSI Technology, 2008 Symposium on

Date of Conference:

17-19 June 2008