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Novel Vth tuning process for HfO2 CMOS with oxygen-doped TaCx

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10 Author(s)
Mizubayashi, W. ; MIRAI-ASRC, AIST, Tsukuba ; Akiyama, K. ; Wang, W. ; Ikeda, M.
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We have investigated effects of the oxygen doping into TaCx on the effective work function (Phim,eff) in TaCx/SiO2/Si and TaCx/HfO2/Si gate stacks. It has been found for the first time that the threshold voltage (Vth) is tunable within 0.5~0.6V for HfO2 MOSFETs by adjusting the oxygen content within 0~12 at. % in TaCx. Furthermore, it has been shown that unknown oxygen content in TaCx gates is a possible origin of scattering among the Phim.eff data reported.

Published in:
VLSI Technology, 2008 Symposium on

Date of Conference: 17-19 June 2008

Page(s):
42 - 43
E-ISBN :
978-1-4244-1803-9
Print ISBN:
978-1-4244-1802-2
INSPEC Accession Number:
10140350
Conference Location :
Honolulu, HI
Digital Object Identifier :
10.1109/VLSIT.2008.4588556
Product Type:
Conference Publications

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