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Experimental investigations of silicon nanowire mobility characteristics on (100) SOI as shrinking nanowire width to sub-10 nm are reported. Accurate mobility estimations by advanced split CV method for 50~1000 nanowires are performed. For the first time, electron and hole mobility in -directed nanowires are studied and compared with  nanowires. It is shown that both electron and hole mobility decreases monotonically and electron mobility of -directed nanowire tends to be comparable to that of -directed nanowire as decreasing nanowire width.
VLSI Technology, 2008 Symposium on
Date of Conference: 17-19 June 2008