Referenced Items are not available for this document.
PVT-tolerant and supply noise tracking word-line under-drive circuit, PMOS pass device, and dynamic voltage collapse enable read and write stable diffusion-notch-free (DNF) 6T SRAM cells. Measurements from a 45-nm test-chip show 26X reduction in number of single bit failures using those schemes.
Published in:
VLSI Circuits, 2008 IEEE Symposium on
Date of Conference: 18-20 June 2008
- Page(s):
- 48 - 49
- E-ISBN :
- 978-1-4244-1805-3
- Print ISBN:
- 978-1-4244-1804-6
- INSPEC Accession Number:
- 10153544
- Conference Location :
- Honolulu, HI
- Digital Object Identifier :
- 10.1109/VLSIC.2008.4585947
- Product Type:
- Conference Publications
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