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Fabrication and characterization of n-ZnO nanorod/p-CuAlO2 heterojunction

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3 Author(s)
Bo Ling ; Tanoelectronics Laboratory, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798, Singapore ; Xiaowei Sun ; Junliang Zhao

n-ZnO nanorod/p-CuAlO2 heterojunction diodes have been fabricated on p+-Si (100) substrates. The p-CuAlO2 thin films were deposited on Si substrates by DC-sputtering method and then n-ZnO nanorods were grown by vapor phase transport (VPT) system on the CuAlO2 layer. The well aligned ZnO nanorods show single wurtzite hexagonal structure. Current-voltage characterization of the heterojunction exhibits rectifying diode behavior with a turn-on voltage of about 4.5 V. Electroluminescence emission, involving a weak near-band-edge emission of ZnO at 380 nm and a strong deep-level emission at 550 nm were observed at room temperature from the diode under forward bias.

Published in:

2008 2nd IEEE International Nanoelectronics Conference

Date of Conference:

24-27 March 2008