By Topic

Self-organized pattern formation by ion beam erosion

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
B. Rauschenbach ; Leibniz-Institut fur Oberflachenmodifizierung, Permoserstr. 15 , D-04318 Leipzig, Germany ; B. Ziberi ; F. Frost

The dot and ripple surface topography emerging on Si, Ge and compound semiconductor surfaces during low-energy (les2000 eV) noble gas ion beam erosion at oblique ion incidence is studied. The results show that there is a much more complex behavior of the surface topography with ion energy, ion fluence, angle of incidence, etc.

Published in:

2008 2nd IEEE International Nanoelectronics Conference

Date of Conference:

24-27 March 2008