By Topic

MOCVD-Grown Dilute Nitride Type II Quantum Wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Mawst, L.J. ; Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI ; Huang, J.Y.-T. ; Xu, D.P. ; Jeng-Ya Yeh
more authors

Dilute nitride Ga(In)NAs/GaAsSb ldquoWrdquo type II quantum wells on GaAs substrates have been grown by metal-organic chemical vapor deposition (MOCVD). Design studies underscore the importance of nitrogen incorporation to extend the emission wavelength into the 1.5 mum region as well as increase the electron confinement, given the material strain relaxation limitations. These studies also indicate that the Sb content of the GaAs1-xSbx hole well is required to be greater than x ~ 0.2, to provide adequate hole confinement (i.e., DeltaEnu > 150 meV). Photoluminescence (PL) and electroluminescence (EL) studies are used to characterize the optical transitions and compare with a ten-band bm k.p simulation. We find that the lowest energy type II transition observed is in good agreement with theory. Preliminary results are presented on diode lasers with two- and three-stage ldquoWrdquo-active regions that exhibit emission that is blue-shifted from the PL, due to charge separation and carrier band-filling of higher energy transitions. Further structure optimization, including multiple-stage (eight to ten W-stages) active regions is required to lower the threshold carrier density and minimize carrier band-filling and built-in electric field effects resulting from charge separation. Dilute nitride materials, such as GaAs1- y-z Sby Nz /InP, are also under development offering potential for wavelength extension into the mid-IR employing InP substrates.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:14 ,  Issue: 4 )