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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:29 Issue:8 Help

High-Gain Amplifiers With Amorphous-Silicon Thin-Film Transistors

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1 Author(s)
Sambandan, S. ; Electron. Mater. & Devices Lab., Palo Alto Res. Center, Palo Alto, CA

This letter demonstrates amplifier design with amorphous-hydrogenated-silicon thin-film transistors (TFTs) for high dc gain. High dc gain is achieved by using positive feedback to improve load impedance. The transfer characteristics of the amplifier are resistant to threshold voltage shift in the TFTs.

Published in:
Electron Device Letters, IEEE  (Volume:29 ,  Issue: 8 )

Date of Publication: Aug. 2008

Page(s):
882 - 884
ISSN :
0741-3106
INSPEC Accession Number:
10118006
Digital Object Identifier :
10.1109/LED.2008.2000951
Product Type:
Journals & Magazines
Date of Current Version :
22 July 2008
Issue Date :
Aug. 2008
Sponsored by :
IEEE Electron Devices Society

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