Referenced Items are not available for this document.
In this letter, we investigated the effects of source/drain series resistance on amorphous gallium-indium-doped zinc-oxide (a-GIZO) thin film transistors (TFTs). A linear least square fit of a plot of the reciprocal of channel resistance versus gate voltage yields a threshold voltage of 3.5 V and a field-effect mobility of about 13.5 cm2/Vldrs. Furthermore, in a-GIZO TFTs, most of the current flows in the distance range of 0-0.5 mum from the channel edge and shorter than that in a-Si:H TFTs. Moreover, unlike a-Si:H TFTs, a-GIZO TFTs did not show an intersection point, because they did not contain a highly doped ohmic (n+) layer below the source/drain electrodes.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
8
)
Date of Publication: Aug. 2008
- Page(s):
- 879 - 881
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10118033
- Digital Object Identifier :
- 10.1109/LED.2008.2000815
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 22 July 2008
- Issue Date :
- Aug. 2008
- Sponsored by :
- IEEE Electron Devices Society
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