Cart (Loading....) | Create Account
Close category search window
 

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Dae-Hyun Kim ; Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA ; del Alamo, J.A.

We report on InAs pseudomorphic high-electron mobility transistors (PHEMTs) on an InP substrate with record cutoff frequency characteristics. This result was achieved by paying attention to minimizing resistive and capacitive parasitics and improving short-channel effects, which play a key role in high-frequency response. Toward this, the device design features a very thin channel and is fabricated through a three-step recess process that yields a scaled-down barrier thickness. A 30-nm InAs PHEMT with t ins = 4 nm and t ch = 10 nm exhibits excellent g m, max of 1.62 S/mm, f T of 628 GHz, and f max of 331 GHz at V DS = 0.6 V . To the knowledge of the authors, the obtained f T is the highest ever reported in any FET on any material system. In addition, a 50-nm device shows the best combination of f T= 557 GHz and f max = 718 GHz of any transistor technology.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 8 )

Date of Publication:

Aug. 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.