Referenced Items are not available for this document.
A 175-to-350 V hard-switched boost converter was constructed using a high-voltage GaN high-electron-mobility transistor grown on SiC substrate. The high speed and low on-resistance of the wide-band-gap device enabled extremely fast switching transients and low losses, resulting in a high conversion efficiency of 97.8% with 300-W output power at 1 MHz. The maximum efficiency was 98.0% at 214-W output power, well exceeding the state of the art of Si-based converters at similar frequencies.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
8
)
Date of Publication: Aug. 2008
- Page(s):
- 824 - 826
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10118019
- Digital Object Identifier :
- 10.1109/LED.2008.2000921
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 22 July 2008
- Issue Date :
- Aug. 2008
- Sponsored by :
- IEEE Electron Devices Society
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