Referenced Items are not available for this document.
We propose a novel approach to engineering floating gates (FGs) of flash memory cells, namely, carbon incorporation into polysilicon FGs. This technique demonstrated an improvement in retention and a larger program/erase Vt window, particularly for smaller capacitance coupling ratio cells, which is important for future scaled flash memory cells.
Published in:
Electron Device Letters, IEEE
(Volume:29
,
Issue:
7
)
Date of Publication: July 2008
- Page(s):
- 688 - 690
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10132868
- Digital Object Identifier :
- 10.1109/LED.2008.2000600
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 July 2008
- Issue Date :
- July 2008
- Sponsored by :
- IEEE Electron Devices Society
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