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Carbon-Doped Polysilicon Floating Gate for Improved Data Retention and P/E Window of Flash Memory

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7 Author(s)
Jing Pu ; Silicon Nano Device Lab., Nat. Univ. of Singapore, Singapore ; Kim, Sun-Jung ; Seung-Hwan Lee ; Young-Sun Kim
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We propose a novel approach to engineering floating gates (FGs) of flash memory cells, namely, carbon incorporation into polysilicon FGs. This technique demonstrated an improvement in retention and a larger program/erase Vt window, particularly for smaller capacitance coupling ratio cells, which is important for future scaled flash memory cells.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 7 )