By Topic

Dielectric Discharging processes in RF-MEMS Capacitive Switches

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Papaioannou, G. ; Phys. Dept. Nat. Kapodistrian, Univ. of Athens, Athens ; Papandreou, E. ; Papapolymerou, J. ; Daigler, R.

The discharging processes in silicon nitride dielectric film of RF-MEMS capacitive switches are investigated for the first time. The study includes the dependence of discharging as a function of temperature that allows the detection of thermally activated mechanisms. The discharging time constants were found to depend only on temperature and not on the actuation bias polarity.

Published in:

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Date of Conference:

11-14 Dec. 2007