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Analytical Study of leakage characteristics change during multilevel interconnect process using porogen-type porous SiOC (k=2.4)/Cu system

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8 Author(s)
Ohashi, N. ; Research Dept. 2, Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki-ken, 305-8569, Japan, Phone:+81-298-49-1282, Fax:+82-298-49-1186, E-mail: ohhashi.naohumi@selete.co.jp ; Nakahira, J. ; Soda, E. ; Tomioka, K.
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The change in leakage I-V characteristics by multilevel processing of Cu interconnects with porogen-type p-SiOC (k=2.4) was investigated. Although the change can be eliminated by UV-cure condition, it was found that another process conditions can affect the leakage characteristics; the combination of NH3 plasma treatment after Cu-CMP and the additional UV-cure in multilevel process. It was also found that the influence of NH3 plasma damage on interface between p-SiOC and cap-CVD was decreased using low-pressure ion-reaction oriented trench etching (LP-RIE).

Published in:
Interconnect Technology Conference, 2008. IITC 2008. International

Date of Conference: 1-4 June 2008

Page(s):
58 - 60
E-ISBN :
978-1-4244-1912-8
Print ISBN:
978-1-4244-1911-1
Conference Location :
Burlingame, CA, USA
Digital Object Identifier :
10.1109/IITC.2008.4546925

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