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A 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technology

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4 Author(s)
Brandano, D. ; IMSE-CNM (CSIC), Inst. de Microelectron. de Sevilla, Sevilla ; Delgado-Restituto, M. ; Ruiz-Amaya, J. ; Rodriguez-Vazquez, A.

An Electrostatic Discharge (ESD) protected Low- Noise Amplifier (LNA) for the 2.4 GHz ISM band designed in a 0.13 mum standard RFCMOS technology is presented. The amplifier, including packaging effects, achieves 16.8 dB power gain, reflexion coefficients S11, S22 < -30 dB over the 2.4 GHz ISM band, a peak noise figure of 1.8 dB, and an IIP3 of 1 dBm, while drawing less than 4.5 mA dc biasing current from the 1.2 V power supply. Further, the LNA withstands a Human Body Model (HBM) ESD stress up to plusmn2.0 kV, by means of the additional custom protection circuitry.

Published in:

Circuit Theory and Design, 2007. ECCTD 2007. 18th European Conference on

Date of Conference:

27-30 Aug. 2007