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A Fully Differential CMOS Current Memory Cell for Space-Embedded Analog-to-Digital Converters

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3 Author(s)
Bernal, O.O. ; O. Bernal is with the Institute of Microelectronics, Singapore 117685. ; Cousineau, M. ; Lescure, M.

This paper presents a radiation-hardened high-resolution current memory cell (CMC) that can be used to implement current-mode analog-to-digital converters (ADCs) for space-embedded, charge-coupled device processors. This CMC is based on a fully differential structure and on the Miller effect to reduce charge-injection errors. Using a commercial 0.35- \mu\hbox {m} 3.3-V complementary metal¿¿¿¿oxide¿¿¿¿semiconductor (CMOS) process, the radiation tolerance of this CMC has been enhanced by designing enclosed n-channel MOS transistors, using p-channel MOS switches only, and introducing guard rings wherever necessary. Results show that the CMC accuracy is 10 bits and that its estimated linearity error is \pm 50 nA for a [ -200 \mu\hbox {A} ; 200 \mu\hbox {A} ] dynamic input current range. Experimental results point out that signal-dependent charge injections are divided 23 times at least, which improves the CMC accuracy by approximately 4 bits. The measured acquisition time for a 200- \mu\hbox {A} input step transition to achieve a 10-bit settling accuracy is 50 ns. The active chip area and the power consumption of the proposed CMC are 0.042 \hbox {mm}^{2} and 6 mW, respectively.

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Instrumentation and Measurement, IEEE Transactions on  (Volume:PP ,  Issue: 99 )