Referenced Items are not available for this document.
A robust, reliable method of building high-precision MIM (metal-insulator-metal) capacitors with low Vcc, high matching performance and integrated in a 0.18um mixed signal process with sub- 0.35um metallization rules has been demonstrated. Top plate and hardmask materials, along with the influence of top plate etch on defect density have been presented. An innovative method of reducing voltage coefficient for a MIM capacitor has also been reported.
Published in:
Advanced Semiconductor Manufacturing Conference, 2008. ASMC 2008. IEEE/SEMI
Date of Conference: 5-7 May 2008
- Page(s):
- 25 - 30
- ISSN :
- 1078-8743
- E-ISBN :
- 978-1-4244-1965-4
- Print ISBN:
- 978-1-4244-1964-7
- INSPEC Accession Number:
- 10040114
- Conference Location :
- Cambridge, MA
- Digital Object Identifier :
- 10.1109/ASMC.2008.4529001
- Product Type:
- Conference Publications
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